ASSESSMENT OF GAAS HETEROEPITAXIAL FILMS GROWN ON SILICON-ON-SAPPHIRE UPGRADED BY DOUBLE SOLID-PHASE EPITAXY

被引：6
|
作者：
POSTHILL, JB
MARKUNAS, RJ
HUMPHREYS, TP
NEMANICH, RJ
DAS, K
PARIKH, NR
ROSS, PL
MINER, CJ
机构：
[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695
[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[3] N CAROLINA STATE UNIV,DEPT PHYS & ASTRON,RALEIGH,NC 27695
[4] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 17期
关键词：
D O I：
10.1063/1.102208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1756 / 1758
页数：3
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