CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ELECTRODEPOSITED METAL-OXIDE SUPERLATTICES

被引:17
|
作者
GOLDEN, TD
RAFFAELLE, RP
SWITZER, JA
机构
[1] University of Missouri-Rolla, Materials Research Center, Rolla
关键词
D O I
10.1063/1.109669
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used scanning tunneling microscopy to characterize cleaved cross sections of Pb-Tl-O superlattices. The metal oxide ceramic superlattices were electrodeposited from a single solution, with layer thicknesses as small as 1.5 nm. The lattice parameter of the fcc fluorite-type oxides is approximately 0.536 nm. Modulation wavelengths were determined using Fourier analysis of the STM images and found to be in good agreement with Faraday calculations and x-ray diffraction measurements. The STM is especially well suited for the measurement of modulation wavelengths that are too large to measure by x-ray diffraction, but too small to measure by scanning electron microscopy.
引用
收藏
页码:1501 / 1503
页数:3
相关论文
共 50 条
  • [31] SCANNING-TUNNELING-MICROSCOPY
    GIMZEWSKI, JK
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C7): : 41 - 48
  • [32] Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy
    Teng, KS
    Brown, MR
    Wilks, SP
    Sobiesierski, A
    Smowton, PM
    Blood, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04): : 2014 - 2017
  • [33] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF SEMICONDUCTOR VERTICAL-CAVITY SURFACE-EMITTING LASER STRUCTURE
    ZHENG, JF
    OGLETREE, DF
    WALKER, J
    SALMERON, M
    WEBER, ER
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03): : 2100 - 2103
  • [34] Cross-sectional scanning tunneling microscopy of biased semiconductor lasers
    Cobley, R. J.
    Teng, K. S.
    Brown, M. R.
    Wilks, S. P.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
  • [35] Cross-sectional scanning tunneling microscopy of buried heterostructure lasers
    Cobley, R.J.
    Teng, K.S.
    Brown, M.R.
    Maffeïs, T.G.G.
    Wilks, S.P.
    International Journal of Nanoscience, 2004, 3 (4-5) : 525 - 531
  • [36] Cross-sectional scanning tunneling microscopy of biased semiconductor lasers
    Cobley, R.J.
    Teng, K.S.
    Brown, M.R.
    Wilks, S.P.
    Journal of Applied Physics, 2007, 102 (02):
  • [37] Cross-sectional scanning tunneling microscopy of buried heterostructure lasers
    Cobley, R. J.
    Teng, K. S.
    Brown, M. R.
    Maffeis, T. G. G.
    Wilks, S. P.
    International Journal of Nanoscience, Vol 3, Nos 4 and 5, 2004, 3 (4-5): : 525 - 531
  • [38] SCANNING-TUNNELING-MICROSCOPY AND SCANNING FORCE MICROSCOPY
    ALVARADO, SF
    SURFACE REVIEW AND LETTERS, 1995, 2 (05) : 607 - 617
  • [39] DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY (VOL 63, PG 2923, 1993)
    JOHNSON, MB
    ALBREKTSEN, O
    FEENSTRA, RM
    SALEMINK, HW
    APPLIED PHYSICS LETTERS, 1994, 64 (11) : 1454 - 1454
  • [40] A SCANNING-TUNNELING-MICROSCOPY STUDY OF VANADIUM-OXIDE
    OSHIO, T
    SAKAI, Y
    MORIYA, T
    EHARA, S
    SCANNING MICROSCOPY, 1993, 7 (01) : 33 - 36