Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

被引：0
|
作者：
Cobley, R.J. [1 ]
Teng, K.S. [1 ]
Brown, M.R. [1 ]
Wilks, S.P. [1 ]
机构：
[1] Multidisciplinary Nanotechnology Centre, School of Engineering, Swansea University, Singleton Park, Swansea SA2 8PP, United Kingdom
来源：
Journal of Applied Physics | 2007年 / 102卷 / 02期
关键词：
Cross-sectional scanning tunneling microscopy is applied to semiconductor lasers which are biased and producing light. Two device structures are investigated-a double quantum well laser and a buried heterostructure device with two-dimensional growth variation. Scanning tunneling microscopy (STM) images are collected as a function of sample drive bias. Changes that occur in the STM image as a result of powering the sample are observed; which are due to changes in the energy band structure and the carrier concentration in the device as it responds to bias. The observed changes are largely reversible and a model is presented which matches and confirms this behavior. Once these effects are confirmed and decoupled; the technique can be used to study device-specific behavior resulting from physical changes in lasers as they are operated. © 2007 American Institute of Physics;
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