A VOLTAGE-CONTROLLABLE LINEAR MOS TRANSCONDUCTOR USING BIAS OFFSET TECHNIQUE

被引：113
|
作者：
WANG, ZH
GUGGENBUHL, W
机构：
[1] Institute of Electronics. Department of Electrical Engineering, Swiss Federal Institute of Technology
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 01期
关键词：
D O I：
10.1109/4.50321
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
— A linear large-signal MOS transconductor is described with the gain adjustable linearly by a voltage. A perfect linear transfer characteristic is obtained by two cross-coupled differential transistor pairs operating in saturation pairwise at unequal bias, offering offset-free operation, with both differential or single-ended input and differential output. Single-ended output is achievable by use of a current mirror. The nonlinearity caused by mobility reduction, channel-length modulation, mismatch, etc. is discussed. A test circuit with transconductance of 6.25 μmho has been built with 3-μm MOS components and a linearity error of less than ± 1 percent was measured for an input voltage range from -4 to 4 V. © 1990 IEEE
引用
收藏
页码：315 / 317
页数：3
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