IONIZATION ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON

被引：0
|
作者：
CHATTERJEE, AP [1 ]
TROXELL, JR [1 ]
WATKINS, GD [1 ]
机构：
[1] LEHIGH UNIV,BETHLEHEM,PA 18015
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：214 / 215
页数：2
相关论文
共 50 条
  • [31] Aluminum-enhanced sharpening of silicon nanocones
    Yewu Wang
    Jan Bauer
    Stephan Senz
    Otwin Breitenstein
    Ulrich Gösele
    Applied Physics A, 2010, 99 : 705 - 709
  • [32] EXAMPLES OF IMPURITY EFFECTS ON BUBBLE MIGRATION IN ALUMINUM AND SILICON
    COX, RJ
    EVANS, JH
    VANVEEN, A
    JOURNAL OF METALS, 1988, 40 (11): : 112 - 112
  • [33] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN P-TYPE SILICON - BORON INTERSTITIAL AND ALUMINUM INTERSTITIAL DEFECTS
    CHERKI, M
    KALMA, AH
    PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 647 - &
  • [34] THE IONIZATION-ENHANCED DEFECT PRODUCTION IN DOPED SILICON
    KHABIBULLAEV, PK
    ABDURAKHMANOVA, SN
    ZAIKOVSKAIA, MA
    MANNANOVA, KK
    OKSENGENDLER, BL
    IUNUSOV, MS
    DOKLADY AKADEMII NAUK SSSR, 1988, 299 (02): : 358 - 362
  • [35] Al-Al pair in silicon: Evidence for long-range hydrogen-enhanced aluminum migration
    Abdullin, KA
    Mukashev, BN
    Gorelkinskii, YV
    APPLIED PHYSICS LETTERS, 1997, 71 (12) : 1703 - 1705
  • [36] Saddle-point configurations for self-interstitial migration in silicon
    Phys Rev B, 20 (13 521):
  • [37] Enhanced field ionization/desorption on branched silicon nanowires: applications in gas ionization detection
    Banan-Sadeghian, R.
    Islam, M. Saif
    MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS II, 2010, 7679
  • [38] SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES
    BARYAM, Y
    JOANNOPOULOS, JD
    PHYSICAL REVIEW B, 1984, 30 (04): : 2216 - 2218
  • [39] Saddle-point configurations for self-interstitial migration in silicon
    Nastar, M
    Bulatov, VV
    Yip, S
    PHYSICAL REVIEW B, 1996, 53 (20): : 13521 - 13527
  • [40] Effects of interstitial clustering on transient enhanced diffusion of Boron in silicon
    Solmi, S
    Valmorri, S
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 95 - 100
12345