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- [41] Potential fluctuations due to Pb centers at the Si/SiO2 interface Microelectron Eng, 1-4 ([d]219-222):
- [42] STRUCTURAL RELAXATION OF PB DEFECTS AT THE (111)SI/SIO2 INTERFACE AS A FUNCTION OF OXIDATION TEMPERATURE - THE PB-GENERATION-STRESS RELATIONSHIP PHYSICAL REVIEW B, 1993, 48 (04): : 2418 - 2435
- [47] QUANTUM CHEMICAL CLUSTER-MODELS OF THE INTERFACE SI(111)/SIO2 TEORETICHESKAYA I EKSPERIMENTALNAYA KHIMIYA, 1990, 26 (03): : 268 - 275
- [49] SYNCHROTRON RADIATION SPECTROSCOPIES FOR SEMICONDUCTOR INTERFACE CHARACTERIZATION - SI(111)/SIO2 PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 452 : 160 - 167