Photoemission extended fine structure study of the SiO2/Si(111) interface

被引：59
|
作者：
Sieger, MT
Luh, DA
Miller, T
Chiang, TC
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,SEITZ MAT RES LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 13期
关键词：
D O I：
10.1103/PhysRevLett.77.2758
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
High-resolution Si 2p core level photoemission spectra of the SiO2/Si(111) system show chemically shifted components derived from individual oxidation states, which exhibit strong intensity modulations as a function of photon energy due to final-state diffraction. Analysis of these photoemission intensity modulations gives bond-length information specific to the individual suboxide. The results indicate that the interface is atomically abrupt.
引用
收藏
页码：2758 / 2761
页数：4
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