THE GROWTH OF HIGH-QUALITY INGAAS AND INALAS BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
BROWN, AS
DELANEY, MJ
GRIEM, T
HENIGE, J
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
[2] CORNELL UNIV,ITHACA,NY 14853
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：A22 / A23
页数：2
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