HIGH-DOSE URANIUM ION-IMPLANTATION INTO SILICON

被引：5
|
作者：
BROWN, IG
GALVIN, JE
YU, KM
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 31卷 / 04期
关键词：
D O I：
10.1016/0168-583X(88)90455-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：558 / 562
页数：5
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