NUMERICAL CALCULATION OF LOW-FREQUENCY CAPACITANCE-VOLTAGE CURVES OF MOS CAPACITORS WITH NONCONSTANT DOPING PROFILES

被引：3

作者：

PANIGRAHI, G ^{[1
]}

机构：

[1] UNIV ILLINOIS, DEPT COMP SCI, URBANA, IL 61801 USA

来源：

ELECTRONICS LETTERS | 1973年 / 9卷 / 02期

关键词：

D O I：

10.1049/el:19730030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：43 / 44

页数：2

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