NUMERICAL CALCULATION OF LOW-FREQUENCY CAPACITANCE-VOLTAGE CURVES OF MOS CAPACITORS WITH NONCONSTANT DOPING PROFILES

被引：3
|
作者：
PANIGRAHI, G [1 ]
机构：
[1] UNIV ILLINOIS, DEPT COMP SCI, URBANA, IL 61801 USA
来源：
ELECTRONICS LETTERS | 1973年 / 9卷 / 02期
关键词：
D O I：
10.1049/el:19730030
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：43 / 44
页数：2
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