POTENTIAL AND ELECTRON-DISTRIBUTION MODEL FOR THE BURIED-CHANNEL MOSFET

被引：21
|
作者：
VANDERTOL, MJ
CHAMBERLAIN, SG
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 04期
关键词：
D O I：
10.1109/16.22473
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：670 / 689
页数：20
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