DEVICE MODEL FOR BURIED-CHANNEL CCDS AND MOSFETS WITH GAUSSIAN IMPURITY PROFILES

被引：21

作者：

TAYLOR, GW ^{[1
]}

CHATTERJEE, PK ^{[1
]}

CHAO, HH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,ADV COMPONENTS LAB,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 208

页数：10

共 50 条

[1] COMMENTS ON A DEVICE MODEL FOR BURIED-CHANNEL CCDS AND MOSFETS WITH GAUSSIAN IMPURITY PROFILES
WU, DS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2168 - 2169
[2] OPTIMUM SCALING OF BURIED-CHANNEL CCDS
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[3] CAPACITANCE AND DOPING PROFILES OF ION-IMPLANTED, BURIED-CHANNEL MOSFETS
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[4] SHORT-CHANNEL THRESHOLD-MODEL FOR BURIED-CHANNEL MOSFETS
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[5] Threshold voltage control in buried-channel MOSFETs
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[6] DESIGN CONSIDERATIONS FOR SUBMICROMETER BURIED-CHANNEL MOSFETS
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[7] ANOMALOUS PUNCHTHROUGH IN ULSI BURIED-CHANNEL MOSFETS
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[8] CHANNEL POTENTIAL AND CHANNEL WIDTH IN NARROW BURIED-CHANNEL MOSFETS
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[9] DEVICE MODEL FOR AN ION-IMPLANTED BURIED CHANNEL MOSFET AND BURIED-CHANNEL CCD
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1353 - 1353
[10] A NEW BURIED-CHANNEL EEPROM DEVICE
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