DEVICE MODEL FOR BURIED-CHANNEL CCDS AND MOSFETS WITH GAUSSIAN IMPURITY PROFILES

被引：21

作者：

TAYLOR, GW ^{[1
]}

CHATTERJEE, PK ^{[1
]}

CHAO, HH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,ADV COMPONENTS LAB,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 208

页数：10

共 50 条

[21] A physics-based short-channel current-voltage model for buried-channel MOSFETs
Chyau, CG
Jang, SL
SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1177 - 1188
[22] DESIGNING OF A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
ARAKAWA, I
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) : 909 - 910
[23] POTENTIALS AND FIELDS IN BURIED-CHANNEL CCDS - 2-DIMENSIONAL ANALYSIS AND DESIGN STUDY
ELSISSI, H
COBBOLD, RSC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) : 77 - 90
[24] OPERATIONAL MODE IN A BURIED-CHANNEL CHARGE-COUPLED DEVICE
TANIKAWA, K
SHIMOHASHI, A
TOKUHIRA, S
OHTSUKI, O
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (10) : 1629 - 1630
[25] Theoretical Models for Low-Frequency Noise Behaviors of Buried-Channel MOSFETs
Omura, Yasuhisa
Sato, Shingo
2017 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2017,
[26] Buried-channel SiGe HMODFET device potential for micropower applications
Vilches, A
Michelakis, K
Fobelets, K
Haigh, D
Papavassiliou, C
Hackbath, T
Konig, U
SOLID-STATE ELECTRONICS, 2004, 48 (08) : 1423 - 1431
[27] EXPERIMENTAL PERFORMANCE OF THE BURIED-CHANNEL ACOUSTIC CHARGE TRANSPORT DEVICE
HOSKINS, MJ
BOGUS, EG
HUNSINGER, BJ
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 396 - 399
[28] EFFECTS OF RADIATION ON BURIED-CHANNEL CCDS WITH DOPED POLYSILICON GATES AND UNDOPED POLYSILICON INTERELECTRODE ISOLATION
KILLIANY, JM
SAKS, NS
BAKER, WD
BARBE, DF
APPLIED PHYSICS LETTERS, 1974, 24 (10) : 506 - 508
[29] ANOMALOUS NARROW CHANNEL-EFFECT IN TRENCH-ISOLATED BURIED-CHANNEL P-MOSFETS
MANDELMAN, JA
ALSMEIER, J
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (12) : 496 - 498
[30] A SIMPLE-MODEL FOR SHORT-CHANNEL EFFECTS OF A BURIED-CHANNEL MOSFET ON THE BURIED INSULATOR
OMURA, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1749 - 1755

← 1 2 3 4 5 →