CYCLOTRON FIR EMISSION FROM HOT-ELECTRONS IN GAAS/GAALAS HETEROSTRUCTURES

被引:2
|
作者
ZAWADZKI, W
CHAUBET, C
DUR, D
KNAP, W
RAYMOND, A
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
[2] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER,FRANCE
关键词
D O I
10.1016/0038-1101(94)90392-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study far infrared emission from GaAs-GaAlAs heterostructures, induced by electric pulses in the presence of a magnetic field and a hydrostatic pressure. Clyclotron masses are measured as functions of 2D electron density in the strong electron heating regime at pressures P = 0 and P = 7 kbar and the detection energy of 4.43 meV. The results are described by an effective two-level k . p theory, which takes consistently into account the effect of band's nonparabolicity in GaAs on electric and magnetic quantization. It is shown that the observed emission spectrum is due to eight transitions between Landau levels (populated up to the optic phonon energy), since under the strong heating conditions the 2D electron gas is nondegenerate. This is independently confirmed by magnetotransport measurements. Very good theoretical description of emission experiments at pressures P = 0 and P = 7 is achieved with the use of bulk GaAs parameters. Theoretical estimations of the heating conditions in crossed magnetic and electric fields indicate that the electric field in our GaAs-GaAlAs structures is highly inhomogeneous.
引用
收藏
页码:1213 / 1216
页数:4
相关论文
共 50 条
  • [41] QUANTUM TRANSPORT AND PHONON EMISSION OF NONEQUILIBRIUM HOT-ELECTRONS
    CHOI, KK
    NEWMAN, PG
    IAFRATE, GJ
    PHYSICAL REVIEW B, 1990, 41 (14) : 10250 - 10253
  • [42] Conduction electrons in acceptor-doped GaAs/GaAlAs heterostructures: a review
    Zawadzki, Wlodek
    Raymond, Andre
    Kubisa, Maciej
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (05)
  • [43] INVESTIGATION OF HOT-ELECTRONS IN ELECTRON-CYCLOTRON-RESONANCE ION SOURCES
    BARUE, C
    LAMOUREUX, M
    BRIAND, P
    GIRARD, A
    MELIN, G
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) : 2662 - 2670
  • [44] Vacuum emission of hot and ballistic electrons from GaAs
    Fitting, HJ
    Hingst, T
    Schreiber, E
    Geib, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 2087 - 2089
  • [45] HOT-ELECTRONS IN DELTA-DOPED GAAS(SI) LAYERS
    MENDONCA, CAC
    SCOLFARO, LMR
    PLENTZ, F
    MENESES, EA
    OLIVEIRA, AT
    RODRIGUES, R
    GUIMARAES, PSS
    BEZERRA, JC
    DIAS, IFL
    OLIVEIRA, AG
    SOLID STATE COMMUNICATIONS, 1990, 75 (09) : 707 - 710
  • [46] TRANSPORT PARAMETERS OF HOT-ELECTRONS IN GAAS AT 300-K
    GASQUET, D
    DEMURCIA, M
    NOUGIER, JP
    GONTRAND, C
    PHYSICA B & C, 1985, 134 (1-3): : 264 - 267
  • [47] POLARON COUPLING IN GAAS-GAALAS HETEROSTRUCTURES OBSERVED BY CYCLOTRON AND MAGNETOPHONON RESONANCE
    NICHOLAS, RJ
    BARNES, DJ
    LEADLEY, DR
    LANGERAK, CJGM
    SINGLETON, J
    VANDERWEL, PJ
    PERENBOOM, JAAJ
    HARRIS, JJ
    FOXON, CT
    SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES, 1989, 206 : 451 - 470
  • [48] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS
    RAGUOTIS, R
    REKLAITIS, A
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
  • [49] CYCLOTRON-RESONANCE OF HOT-ELECTRONS ON THE SURFACE OF HE-4
    SAITOH, M
    AOKI, T
    SURFACE SCIENCE, 1980, 98 (1-3) : 61 - 65
  • [50] POLARIZATION OF EMISSION FROM INTRABAND TRANSITIONS OF HOT-ELECTRONS IN ZINC-SULFIDE
    MELNICHUK, SV
    CHERNOV, VM
    INORGANIC MATERIALS, 1992, 28 (12) : 1904 - 1907