CARRIER CONCENTRATION PROFILES IN SI-DOPED LIQUID-PHASE EPITAXIAL GA1-XALXAS

被引:5
|
作者
JOHNSON, WJ [1 ]
RADO, WG [1 ]
CRAWLEY, RL [1 ]
AMEY, JE [1 ]
机构
[1] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48121
关键词
D O I
10.1063/1.1662346
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1311 / 1315
页数:5
相关论文
共 50 条
  • [41] INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
    BAUMANN, GG
    BENZ, KW
    PILKUHN, MH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : 1232 - 1235
  • [42] EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY
    PALMSTROM, CJ
    FIMLAND, BO
    SANDS, T
    GARRISON, KC
    BARTYNSKI, RA
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4753 - 4758
  • [43] INTERDIFFUSION-ASSISTED DISLOCATION MIGRATION IN GAAS/GA1-XALXAS LAYERS ON SI(001)
    CHERNS, D
    LORETTO, D
    CHAND, N
    BAHNCK, D
    GIBSON, JM
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 63 (06): : 1335 - 1344
  • [44] PREPARATION OF SOLID-SOLUTIONS GA1-XALXAS FROM THE GAS-PHASE
    KABUTOV, K
    KOROBOV, OE
    MASLOV, VN
    NECHAEV, VV
    [J]. INORGANIC MATERIALS, 1980, 16 (08) : 926 - 928
  • [45] VIBRATIONAL EXCITATIONS IN A-SI1-XGEX-F, A-SI1-XGEX-H, AND GA1-XALXAS ALLOYS
    AGRAWAL, BK
    GHOSH, BK
    YADAV, PS
    [J]. PHYSICAL REVIEW B, 1988, 37 (18): : 10729 - 10737
  • [46] STUDY OF PLASMON-LO-PHONON COUPLING IN TE-DOPED GA1-XALXAS
    KIM, OK
    SPITZER, WG
    [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3258 - 3266
  • [47] FRACTIONAL SECONDARY ION YIELDS OF BE, ZN, CR AND SI IN INP, GAINAS AND GA1-XALXAS
    GAUNEAU, M
    CHAPLAIN, R
    SALVI, M
    DUHAMEL, N
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 180 - 182
  • [48] ANNEALING EFFECT ON THE CARRIER CONCENTRATION IN HEAVILY SI-DOPED N+-INGAAS
    WATANABE, N
    NITTONO, T
    WATANABE, K
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (16) : 1945 - 1947
  • [49] INTERSUBBAND CARRIER RELAXATION IN HIGHLY EXCITED GAAS/GA1-XALXAS MULTIPLE QUANTUM-WELLS
    LEVENSON, JA
    DOLIQUE, G
    OUDAR, JL
    ABRAM, I
    [J]. PHYSICAL REVIEW B, 1990, 41 (06): : 3688 - 3694
  • [50] DOPING BEHAVIOR OF TE IN GA1-XINXAS LIQUID-PHASE EPITAXIAL LAYERS
    NEUMANN, H
    MULLER, A
    GOTTSCHALCH, V
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02): : 463 - 467