CARRIER CONCENTRATION PROFILES IN SI-DOPED LIQUID-PHASE EPITAXIAL GA1-XALXAS

被引：5

作者：

JOHNSON, WJ ^{[1
]}

RADO, WG ^{[1
]}

CRAWLEY, RL ^{[1
]}

AMEY, JE ^{[1
]}

机构：

[1] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48121

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1311 / 1315

页数：5

共 50 条

[21] COMPOSITIONAL CONTROL OF THICK GA1-XALXAS LAYERS (X-LESS-THAN-OR-EQUAL-TO-0.72) GROWN BY LIQUID-PHASE ELECTROEPITAXY
ZYTKIEWICZ, ZR
MIOTKOWSKA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 121 (03) : 457 - 462
[22] A STUDY OF INDEX PROFILES IN MULTILAYER LASER HETEROSTRUCTURES UTILIZING GA1-XALXAS
BOGDANKEVICH, OV
GEORGOBIANI, AN
SOLIN, VG
TODUA, PA
[J]. KVANTOVAYA ELEKTRONIKA, 1983, 10 (02): : 426 - 427
[23] PRESSURE STUDY OF METASTABILITY IN GA1-XALXAS GAAS-SI HETEROJUNCTIONS
PIOTRZKOWSKI, R
ROBERT, JL
LITWINSTASZEWSKA, E
ANDRE, JP
[J]. PHYSICAL REVIEW B, 1988, 37 (02): : 1031 - 1034
[24] MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES
JONES, MW
FORBES, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 466 - 473
[25] ABSORPTION-COEFFICIENT AND DERIVATIVE TRANSMISSION MEASUREMENT IN GA1-XALXAS EPITAXIAL LAYERS
MADELON, R
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10): : 863 - 867
[26] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY
RUPPRECHT, H
WOODALL, JM
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 81 - +
[27] EFFECT OF DISLOCATIONS ON EXTERNAL QUANTUM EFFICIENCY OF GA1-XALXAS=SI LEDS
ROEDEL, RJ
VONNEIDA, AR
CARUSO, R
DAWSON, LR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C306 - C306
[28] EFFECTS OF ANNEALING ON CARRIER CONCENTRATION OF HEAVILY SI-DOPED GAAS
KUNG, JK
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 912 - 914
[29] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
MILLER, BI
PINKAS, E
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287
[30] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS
BARTELS, WJ
NIJMAN, W
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 518 - 525

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