INGAAS/INP QUANTUM-WELL WIRES FABRICATED BY GSMBE, MOCVD, AND SELECTIVE CHEMICAL ETCHING TECHNIQUES

被引：11

作者：

NAGANUMA, M

NOTOMI, M

IWAMURA, H

OKAMOTO, M

NISHIDA, T

TAMAMURA, T

机构：

[1] NTT Opto-electronics Laboratories, Kanagawa Pref., 243-01, 3-1, Morinsato Wakamiya, Astugi-shi

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90372-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs/InP quantum well wires with dimensions down to 10 nm are fabricated by GSMBE, MOCVD and selective and anisotropic chemical etching technique combined with electron beam lithography. A clear cathodoluminescence blue shift was observed for the wires whose cross-sectional dimensions were 5 nm in thickness and about 30 nm in width. With the method developed here, it is possible to fabricate ultrafine structures even less than 10 nm in size. © 1990.

引用

页码：254 / 259

页数：6

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