INGAAS/INP QUANTUM WIRES SELECTIVELY GROWN BY CHEMICAL BEAM EPITAXY

被引：9
|
作者：
NISHIDA, T
SUGIURA, H
NOTOMI, M
TAMAMURA, T
机构：
[1] NTT Optoelectronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, 243-11, 3-1 Wakamiya, Morinosato
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(93)90250-Z
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report InGaAs/InP wire structures as narrow as 15 nm grown by chemical beam epitaxy (CBE) and a very fine SiO2 mask fabricated by electron beam (E-beam) lithography. InGaAs well wires grown along [110] on an InP(001) substrate can be effectively embedded in InP due to {111}B facet growth resulting in strong optical activity. The mask coverage has no influence on the wire structure because of the high-vacuum growth environment in CBE. However, the opening width of the mask causes the thickness and composition of the wires to vary. By taking this variation into account, a blue shift of photoluminescence spectra due to two-dimensional confinement is confirmed for wires narrower than 30 nm.
引用
收藏
页码：91 / 98
页数：8
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