INGAAS/INP QUANTUM-WELL WIRES FABRICATED BY GSMBE, MOCVD, AND SELECTIVE CHEMICAL ETCHING TECHNIQUES

InGaAs/InP quantum well wires with dimensions down to 10 nm are fabricated by GSMBE, MOCVD and selective and anisotropic chemical etching technique combined with electron beam lithography. A clear cathodoluminescence blue shift was observed for the wires whose cross-sectional dimensions were 5 nm in thickness and about 30 nm in width. With the method developed here, it is possible to fabricate ultrafine structures even less than 10 nm in size. © 1990.