QUANTUM WIRES IN INGAAS INP FABRICATED BY HOLOGRAPHIC PHOTOLITHOGRAPHY

被引：63
|
作者：
MILLER, BI
SHAHAR, A
KOREN, U
CORVINI, PJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期
关键词：
D O I：
10.1063/1.101222
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：188 / 190
页数：3
相关论文
共 50 条
  • [1] Trench-type narrow InGaAs quantum wires fabricated on a (311)A InP substrate
    Sugaya, T
    Ogura, M
    Sugiyama, Y
    Matsumoto, K
    Yonei, K
    Sekiguchi, T
    APPLIED PHYSICS LETTERS, 2001, 78 (01) : 76 - 78
  • [2] InP/InAlAs/InGaAs-quantum wires
    Kappelt, M
    Turck, V
    Grundmann, M
    Cerva, H
    Bimberg, D
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 757 - 760
  • [3] InGaAs quantum wires grown on (100)InP substrates
    Tzeng, T. E.
    Chen, C. Y.
    Feng, David J.
    Lay, T. S.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1851 - 1854
  • [4] INGAAS/INP QUANTUM-WELL WIRES FABRICATED BY GSMBE, MOCVD, AND SELECTIVE CHEMICAL ETCHING TECHNIQUES
    NAGANUMA, M
    NOTOMI, M
    IWAMURA, H
    OKAMOTO, M
    NISHIDA, T
    TAMAMURA, T
    JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 254 - 259
  • [5] LATERAL QUANTIZATION EFFECTS IN THE LUMINESCENCE OF INGAAS/INP QUANTUM WIRES
    FORCHEL, A
    KIESELING, F
    BRAUN, W
    ILS, P
    WANG, KH
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 188 (01): : 229 - 240
  • [6] NEW DRY ETCHING METHOD FOR THE FABRICATION OF INP/INGAAS QUANTUM WIRES
    PATILLON, JN
    JAY, C
    DELALANDE, C
    IOST, M
    ANDRE, JP
    LECOZ, H
    SIGNLESFREHEL, M
    VLAEMINCK, O
    SOUCAIL, B
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B): : L252 - L254
  • [7] Optical gain of compressively strained InGaAs/InP multiple quantum wires
    Park, Seoung-Hwan
    Shim, Jong-In
    Yi, Sam Nyung
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (07)
  • [8] LATERAL QUANTIZATION EFFECTS IN MODULATED BARRIER INGAAS/INP QUANTUM WIRES
    KERKEL, K
    OSHINOWO, J
    FORCHEL, A
    WEBER, J
    ZIELINSKI, E
    APPLIED PHYSICS LETTERS, 1995, 67 (23) : 3456 - 3458
  • [9] Fabrication of InP/InGaAs quantum wires by free Cl-2
    Panepucci, R
    Youtsey, C
    Turnbull, DA
    Gu, SQ
    Caneau, C
    Bishop, SG
    Adesida, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2752 - 2756
  • [10] IMPROVEMENT OF THE QUALITY OF INGAAS/INP QUANTUM WIRES DUE TO EPITAXIAL OVERGROWTH
    BERGMANN, R
    MENSCHIG, A
    LEHR, G
    KUBLER, P
    HOMMEL, J
    RUDELOFF, R
    HENLE, B
    SCHOLZ, F
    SCHWEIZER, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2893 - 2895
12345