SPLIT-GATE FIELD-EFFECT TRANSISTOR

被引：48
|
作者：
SHUR, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 02期
关键词：
D O I：
10.1063/1.101216
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：162 / 164
页数：3
相关论文
共 50 条
  • [31] A 30-nm-gate field-effect transistor
    Obolenskii, SV
    Kitaev, MA
    [J]. TECHNICAL PHYSICS LETTERS, 2000, 26 (05) : 408 - 409
  • [32] Double-gate organic field-effect transistor
    Morana, M
    Bret, G
    Brabec, C
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (15) : 1 - 3
  • [33] Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor
    Karmakar, Priyanka
    Sahu, P. K.
    [J]. SILICON, 2022, 14 (12) : 6729 - 6736
  • [34] Modified Gate Oxide Double Gate Tunnel Field-Effect Transistor
    Priyanka Karmakar
    P. K. Sahu
    [J]. Silicon, 2022, 14 : 6729 - 6736
  • [35] EXCESS GATE CURRENT IN A JUNCTION-GATE FIELD-EFFECT TRANSISTOR
    MO, DL
    [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07): : 1166 - &
  • [36] Split-gate LDMOS with double vertical field plates
    Wu, Lijuan
    Yuan, Na
    Lei, Bing
    Zhang, Yinyan
    Song, Yue
    [J]. MICRO & NANO LETTERS, 2018, 13 (11) : 1580 - 1584
  • [37] Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region
    Fang, Dong
    Yang, Guang
    Qiao, Ming
    Xiao, Kui
    Yang, Xiangyu
    Bian, Zheng
    Zhang, Bo
    [J]. MICROELECTRONICS JOURNAL, 2022, 130
  • [38] INSULATED-GATE FIELD-EFFECT TRANSISTOR - A BIPOLAR TRANSISTOR IN DISGUISE.
    Johnson, E.O.
    [J]. 1600, (34):
  • [39] A novel dual-gate high electron mobility transistor using a split-gate structure
    Collier, NJ
    Cleaver, JRA
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (20) : 2958 - 2960
  • [40] Novel dual-gate high electron mobility transistor using a split-gate structure
    Collier, N.J.
    Cleaver, J.R.A.
    [J]. Applied Physics Letters, 1997, 71 (20):
12345