ION-BEAM HYDROGENATION OF AMORPHOUS-SILICON

被引：0
|
作者：
TSUO, YS
SMITH, EB
DENG, XJ
XU, Y
DEB, SK
机构：
[1] Solar Energy Research Inst, United States
来源：
SOLAR CELLS | 1988年 / 24卷 / 3-4期
关键词：
Dark Conductivities - Hydrogen Atoms - Hydrogenated Amorphous Silicon - Ion-Beam Hydrogenation - Monohydrides - Post-Deposition Hydrogenation;
D O I：
10.1016/0379-6787(88)90075-0
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
(Edited Abstract)
引用
收藏
页码：249 / 256
页数：8
相关论文
共 50 条
  • [31] HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY AN ION-BEAM-SPUTTERING TECHNIQUE
    KOBAYASHI, M
    SARAIE, J
    MATSUNAMI, H
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 696 - 697
  • [32] DUAL-ION-BEAM SPUTTERING TECHNIQUE FOR THE PRODUCTION OF HYDROGENATED AMORPHOUS-SILICON
    SCAGLIONE, S
    COLUZZA, C
    DELLASALA, D
    MARIUCCI, L
    FROVA, A
    FORTUNATO, G
    [J]. THIN SOLID FILMS, 1984, 120 (03) : 215 - 222
  • [33] ION-BEAM-INDUCED EPITAXY AND INTERFACIAL SEGREGATION OF AU IN AMORPHOUS-SILICON
    ELLIMAN, RG
    JACOBSON, DC
    LINNROS, J
    POATE, JM
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (05) : 314 - 316
  • [34] THE INFLUENCE OF ARGON AS AN IMPURITY IN ION-BEAM-INDUCED CRYSTALLIZATION OF AMORPHOUS-SILICON
    HARITH, MA
    LAFERLA, A
    FERLA, G
    RIMINI, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) : 641 - 644
  • [35] PHENOMENOLOGICAL DESCRIPTION OF ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-SILICON
    PRIOLO, F
    SPINELLA, C
    RIMINI, E
    [J]. PHYSICAL REVIEW B, 1990, 41 (08): : 5235 - 5242
  • [36] Ion-beam sputtered amorphous silicon films for cryogenic precision measurement systems
    Murray, Peter G.
    Martin, Iain W.
    Hough, Kieran Craig James
    Robie, Raymond
    Rowan, Sheila
    Abernathy, Matt R.
    Pershing, Teal
    Penn, Steven
    [J]. PHYSICAL REVIEW D, 2015, 92 (06):
  • [37] ION-BEAM INDUCED CRYSTALLIZATION AND AMORPHIZATION AT A CRYSTALLINE AMORPHOUS INTERFACE IN [100] SILICON
    LEIBERICH, A
    MAHER, DM
    KNOELL, RV
    BROWN, WL
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 457 - 461
  • [38] AMORPHOUS CRYSTAL SILICON INTERFACES - STRUCTURE AND MOVEMENT UNDER ION-BEAM IRRADIATION
    BATTAGLIA, A
    PRIOLO, F
    RIMINI, E
    [J]. APPLIED SURFACE SCIENCE, 1992, 56-8 : 577 - 588
  • [39] ION-BEAM ETCHING OF SILICON DIOXIDE ON SILICON
    MADER, L
    HOEPFNER, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1893 - 1898
  • [40] EFFECTS OF CONTROLLED HYDROGENATION BY ION-IMPLANTATION ON THE LOCALIZED STATES IN VACUUM EVAPORATED AMORPHOUS-SILICON
    LEE, TC
    NEUDECK, GW
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3977 - 3982
12345