PREPARATION OF HIGHLY ARSENIC-DOPED GERMANIUM

被引:0
|
作者
MOODY, PL
STRAUSS, AJ
机构
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C64 / C64
页数:1
相关论文
共 50 条
  • [31] Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
    Zhang Xiao-Hua
    Chen Lu
    Lin Tie
    He Li
    Guo Shao-Ling
    Chu Jun-Hao
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2012, 31 (05) : 407 - 410
  • [32] XRF analysis of arsenic-doped skin phantoms
    Studinski, RCN
    McNeill, FE
    Chettle, DR
    O'Meara, JM
    X-RAY SPECTROMETRY, 2004, 33 (04) : 285 - 288
  • [33] Optical characteristics of arsenic-doped ZnO nanowires
    Lee, W
    Jeong, MC
    Myoung, JM
    APPLIED PHYSICS LETTERS, 2004, 85 (25) : 6167 - 6169
  • [34] Deactivation kinetics in heavily arsenic-doped silicon
    CNR-LAMEL Institute, 101- 40129 Bologna, Italy
    不详
    不详
    不详
    J Electrochem Soc, 11 (4246-4252):
  • [35] INSITU ARSENIC-DOPED POLYSILICON FOR VLSI APPLICATIONS
    ARIENZO, M
    MEGDANIS, AC
    SACKLES, PE
    MICHEL, AE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1535 - 1538
  • [36] ROLE OF OXYGEN IN IRRADIATED ARSENIC-DOPED SILICON
    EVWARAYE, AO
    APPLIED PHYSICS LETTERS, 1976, 29 (08) : 476 - 478
  • [37] Sources of carrier compensation in arsenic-doped HgCdTe
    Duan, H.
    Dong, Y. Z.
    Luo, J.
    Huang, Y.
    Chen, X. S.
    Lu, W.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2013, 74 (01) : 57 - 64
  • [38] Characterization of electrically inactive arsenic atoms in heavily arsenic-doped Si
    Kikuchi, Y
    Goto, Y
    SURFACE AND INTERFACE ANALYSIS, 2005, 37 (02) : 201 - 203
  • [39] MECHANISM OF ARSENIC DIFFUSION INTO SILICON FROM ARSENIC-DOPED OXIDE SOURCE
    BEYER, KD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 630 - 632
  • [40] Simulation of antimony diffusion in heavily arsenic-doped silicon
    NTT System Electronics Lab, Kanagawa, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 A (1693-1696):