Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

被引：0
|
作者：
Zhang Xiao-Hua [1 ]
Chen Lu [2 ]
Lin Tie [1 ]
He Li [2 ]
Guo Shao-Ling [1 ]
Chu Jun-Hao [1 ,3 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Res Ctr Adv Mat & Devices, Shanghai 200083, Peoples R China
[3] E China Normal Univ, ECNU SITP Joint Lab Image Informat, Shanghai 200062, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2012年 / 31卷 / 05期
基金：
中国国家自然科学基金;
关键词：
HgCdTe; photoluminescence; carrier concentration; ACTIVATION; ENERGY;
D O I：
10.3724/SP.J.1010.2012.00407
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that As-Te, V-Hg, Te-Hg-V-Hg and Te-Hg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More Te-Hg-V-Hg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of Te-Hg, which lowers the mobility of the material.
引用
收藏
页码：407 / 410
页数：4
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