SPUTTER-INDUCED DAMAGE IN AL/N-GAAS AND AL/P-GAAS SCHOTTKY BARRIERS

被引：40
|
作者：
VANDENBROUCKE, DA
VANMEIRHAEGHE, RL
LAFLERE, WH
CARDON, F
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1987年 / 2卷 / 05期
关键词：
D O I：
10.1088/0268-1242/2/5/008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：293 / 298
页数：6
相关论文
共 50 条
  • [1] Photoemission microscopy investigation of buried p-n GaAs homojunctions and Al/n-GaAs Schottky barriers
    Barbo, F
    Bertolo, M
    Bianco, A
    Cautero, G
    Fontana, S
    Johal, TK
    La Rosa, S
    Purandare, RC
    Svetchnikov, N
    [J]. SURFACE REVIEW AND LETTERS, 2002, 9 (01) : 249 - 254
  • [2] SCHOTTKY-BARRIER ENHANCEMENT USING REACTED NI2AL3NI/N-GAAS, NI/AL/NI/N-GAAS, AND NIAL/AL/NI/N-GAAS CONTACTS
    CHEN, CP
    CHANG, YA
    KUECH, TF
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4777 - 4782
  • [3] CHARACTERISTICS OF TIN N-GAAS SCHOTTKY BARRIERS
    ZHANG, LC
    GAO, YZ
    [J]. CHINESE PHYSICS, 1990, 10 (03): : 779 - 785
  • [4] SHALLOW OHMIC CONTACT TO BOTH N-GAAS AND P-GAAS
    HAN, WY
    LU, Y
    LEE, HS
    COLE, MW
    CASAS, LM
    DEANNI, A
    JONES, KA
    YANG, LW
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 754 - 756
  • [5] Sputter-induced defects in Zn-doped GaAs Schottky diodes
    Arakaki, H
    Ohashi, K
    Sudou, T
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) : 127 - 132
  • [6] PHOTOSENSITIVITY OF THE EPITAXIAL STRUCTURE P-GAAS/N-GAAS/P-SI
    IVANYUTIN, LA
    KATSAPOV, FM
    RAKHLEI, SY
    TSYPLENKOV, IN
    [J]. SEMICONDUCTORS, 1995, 29 (10) : 914 - 916
  • [7] NEAR-FLAT-BAND N-GAAS AND P-GAAS IN AIR
    KIRCHNER, PD
    WOODALL, JM
    PETTIT, GD
    WARREN, AC
    WRIGHT, SL
    TSANG, JC
    FREEOUF, JL
    BAKER, JM
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 311 - 312
  • [8] PHOTOELECTROCHEMICAL PROPERTIES OF N-GAAS COATED WITH P-GAAS EPITAXIAL LAYER BY MBE
    SUZUKI, T
    IIZUKA, K
    MIZUTANI, F
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C465 - C465
  • [9] CHARACTERISTICS OF TA AND TA-AL ALLOY SCHOTTKY CONTACTS TO N-GAAS
    HUANG, TS
    JEAN, SM
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7519 - 7525
  • [10] THERMAL-STABILITY OF MO-AL SCHOTTKY METALLIZATIONS ON N-GAAS
    HUANG, TS
    PENG, JG
    LIN, CC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 756 - 762
12345