Sputter-induced defects in Zn-doped GaAs Schottky diodes

被引：10

作者：

Arakaki, H ^{[1
]}

Ohashi, K ^{[1
]}

Sudou, T ^{[1
]}

机构：

[1] Tamagawa Univ, Fac Engn, Machida, Tokyo 1948610, Japan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 01期

关键词：

D O I：

10.1088/0268-1242/19/1/021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Schottky barrier diodes are made by ac magnetron deposition of Au on p-type GaAs substrates. Sputtering causes donor-like defects in the surface region of semiconductors, and these donor-like states compensate mostly the Zn shallow acceptor states over distances of 200 nm below the surface. These defects are attributed to the As Frenkel pairs V-As-As-i with an energy level at 0.27 eV below the conduction band. The As Frenkel pairs are responsible for the Fermi level pinning at metal-semiconductor interfaces and also for the observed change in barrier height in sputtered GaAs material.

引用

页码：127 / 132

页数：6

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