A STUDY OF THE LOCATION AND NATURE OF DEEP LEVELS IN ION-IMPLANTED GAAS-MESFETS

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作者：
BLIGHT, SR
THOMAS, H
机构：
来源：
GEC JOURNAL OF RESEARCH | 1988年 / 6卷 / 01期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：25 / 36
页数：12
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