A STUDY OF THE LOCATION AND NATURE OF DEEP LEVELS IN ION-IMPLANTED GAAS-MESFETS

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作者：

BLIGHT, SR

THOMAS, H

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GEC JOURNAL OF RESEARCH | 1988年 / 6卷 / 01期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：25 / 36

页数：12

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