INVERSE PROBLEMS FOR METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CONTACT RESISTIVITY

被引：34
|
作者：
FANG, WF [1 ]
CUMBERBATCH, E [1 ]
机构：
[1] CLAREMONT GRAD SCH,DEPT MATH,CLAREMONT,CA 91711
来源：
SIAM JOURNAL ON APPLIED MATHEMATICS | 1992年 / 52卷 / 03期
关键词：
INVERSE PROBLEM; IDENTIFICATION PROBLEM; ELLIPTIC EQUATION; CONTACT RESISTIVITY; MOSFET;
D O I：
10.1137/0152039
中图分类号：
O29 [应用数学];
学科分类号：
070104 ;
摘要：
Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.
引用
收藏
页码：699 / 709
页数：11
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