INVERSE PROBLEMS FOR METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CONTACT RESISTIVITY

被引：34

作者：

FANG, WF ^{[1
]}

CUMBERBATCH, E ^{[1
]}

机构：

[1] CLAREMONT GRAD SCH,DEPT MATH,CLAREMONT,CA 91711

来源：

SIAM JOURNAL ON APPLIED MATHEMATICS | 1992年 / 52卷 / 03期

关键词：

INVERSE PROBLEM; IDENTIFICATION PROBLEM; ELLIPTIC EQUATION; CONTACT RESISTIVITY; MOSFET;

D O I：

10.1137/0152039

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

Inverse problems arising from the identification of transistor contact resistivity and contact window location are studied. A one-point boundary measurement of the potential is shown to be sufficient to identify each from a one-parameter monotone family, and such identification is both stable and continuously dependent on the parameter. For a nonmonotone family of locations with resistivity given, similar results are obtained for measurement made on almost all boundary points.

引用

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页码：699 / 709

页数：11

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