Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

被引：6

作者：

Narimani, Keyvan ^{[1
]}

Trellenkamp, Stefan ^{[2
]}

Tiedemann, Andreas ^{[1
]}

Mantl, Siegfried ^{[1
]}

Zhao, Qing-Tai ^{[1
]}

机构：

[1] Forschungszentrum Julich, JARA Fundamentals Future Technol, Peter Grunberg Inst PGI 9, D-52428 Julich, Germany

[2] Forschungszentrum Julich, HNF, D-52428 Julich, Germany

来源：

APPLIED SCIENCES-BASEL | 2018年 / 8卷 / 05期

关键词：

tunnel field effect transistor (TFET); band-to-band tunneling (BTBT); trap-assisted tunneling (TAT); gate-all-around (GAA) nanowires (NWs); FIELD-EFFECT TRANSISTORS; ELECTRONICS;

D O I：

10.3390/app8050670

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding I-on-current of 15 mu A/mu m at the supply voltage of V-dd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current I-d from 5 x 10(-6) to 5 x 10(-2) mu A/mu m. Optimized devices also show excellent current saturation, an important feature for analog performance.

引用

页数：7

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