P-CHANNEL AMORPHOUS-SILICON TFTS WITH HIGH HOLE MOBILITY

被引：0
|
作者：
ODA, S [1 ]
ADACHI, N [1 ]
KATOH, S [1 ]
MATSUMURA, M [1 ]
机构：
[1] TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 12期
关键词：
D O I：
10.1109/16.8877
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2448 / 2448
页数：1
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