MEASUREMENT OF THE OCCUPATION LENGTHS OF CHANNELED 17-MEV ELECTRONS AND 54-MEV ELECTRONS AND POSITRONS IN SILICON BY MEANS OF CHANNELING RADIATION

被引：37
|
作者：
KEPHART, JO
PANTELL, RH
BERMAN, BL
DATZ, S
PARK, H
KLEIN, RK
机构：
[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305
[2] GEORGE WASHINGTON UNIV,DEPT PHYS,WASHINGTON,DC 20052
[3] OAK RIDGE NATL LAB,DIV PHYS,OAK RIDGE,TN 37831
[4] AT&T BELL LABS,ALLENTOWN,PA 18103
[5] ADV MICRO DEVICES INC,SUNNYVALE,CA 94088
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.40.4249
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4249 / 4263
页数：15
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