EFFECT OF CHANNELING ON GAMMA-RADIATION SPECTRA OF 870 MEV ELECTRONS IN DIAMOND CRYSTAL

被引：4
|
作者：
DIDENKO, AN
ZABAEV, VN
KALININ, BN
KURKOV, AA
POTYLITSIN, AP
TOMCHAKOV, VK
VOROBIEV, SA
机构：
来源：
PHYSICS LETTERS A | 1981年 / 82卷 / 01期
关键词：
D O I：
10.1016/0375-9601(81)90399-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：54 / 56
页数：3
相关论文
共 50 条
  • [1] EXPERIMENTAL-STUDY OF THE GAMMA-RADIATION OF ELECTRONS IN CHANNELING IN A DIAMOND CRYSTAL
    ADISHCHEV, YN
    VOROBEV, SA
    ZABAEV, VN
    KALININ, BN
    KURKOV, AA
    POTYLITSYN, AP
    [J]. SOVIET JOURNAL OF NUCLEAR PHYSICS-USSR, 1982, 35 (01): : 63 - 68
  • [2] OBSERVATION OF INTENSIVE GAMMA-RADIATION OF 900-MEV ELECTRONS IN THE CASE OF CHANNELING IN A DIAMOND
    VOROBEV, SA
    ZABAEV, VN
    KALININ, BN
    KAPLIN, VV
    POTYLITSYN, AP
    [J]. JETP LETTERS, 1979, 29 (07) : 376 - 380
  • [3] GAMMA-RADIATION OF CHANNELED ELECTRONS IN DIAMOND CRYSTAL
    KALININ, BN
    KAPLIN, VV
    POTYLITSIN, AP
    VOROBIEV, SA
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 169 (03): : 585 - 588
  • [4] SPECTRAL CHARACTERISTICS OF GAMMA-RADIATION OF RELATIVISTIC ELECTRONS AT AXIAL CHANNELING IN SILICON CRYSTAL
    ANDREIASHKIN, MI
    VNUKOV, IE
    VOROBIOV, SA
    DIDENKO, AN
    ZABAEV, VN
    KALININ, BN
    NAUMENKO, GA
    POTYLITSYN, AP
    [J]. DOKLADY AKADEMII NAUK SSSR, 1989, 307 (06): : 1358 - 1360
  • [5] Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
    Andrei V. Korol
    Victor G. Bezchastnov
    Andrey V. Solov’yov
    [J]. The European Physical Journal D, 2017, 71
  • [6] Channeling and radiation of the 855 MeV electrons enhanced by the re-channeling in a periodically bent diamond crystal
    Korol, Andrei V.
    Bezchastnov, Victor G.
    Solov'yov, Andrey V.
    [J]. EUROPEAN PHYSICAL JOURNAL D, 2017, 71 (06):
  • [7] ANGULAR-DISTRIBUTIONS OF GAMMA-RADIATION OF 900-MEV ELECTRONS CHANNELED IN DIAMOND AND SILICON
    ADISHCHEV, YN
    ANANIN, PS
    VOROBEV, SA
    ZABAEV, VN
    KALININ, BN
    KAPLIN, VV
    POTYLITSYN, AP
    TOMCHAKOV, VK
    ROZUM, EI
    [J]. JETP LETTERS, 1979, 30 (07) : 402 - 405
  • [8] PLANAR-CHANNELING RADIATION FROM MEV ELECTRONS IN DIAMOND AND SILICON
    DABAGOV, SB
    BELOSHITSKY, VV
    KUMAKHOV, MA
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (03): : 368 - 374
  • [9] AXIAL-CHANNELING RADIATION FROM MEV ELECTRONS IN DIAMOND AND SILICON
    LOTZ, W
    GENZ, H
    HOFFMANN, P
    NETHING, U
    RICHTER, A
    WEICKENMEIER, A
    KOHL, H
    KNUPFER, W
    SELLSCHOP, JPF
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 256 - 259
  • [10] GAMMA-RADIATION SPECTRA OF 1200 MeV ELECTRONS IN THICK BERYLLIUM, SILICON AND TUNGSTEN SINGLE CRYSTALS
    Bochek, G. L.
    Deiev, O. S.
    Kulibaba, V., I
    Maslov, N., I
    Ovchinnik, V. D.
    Potin, S. M.
    Schramenko, B., I
    [J]. PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2019, (03): : 86 - 93
12345