A GAAS/ALGAAS ASYMMETRIC FABRY-PEROT REFLECTION MODULATOR WITH VERY HIGH CONTRAST RATIO

被引：24
|
作者：
GERBER, DS
DROOPAD, R
MARACAS, GN
机构：
[1] Center for Solid State Engineering Research, Arizona State University, Tempe
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 01期
关键词：
D O I：
10.1109/68.185059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report results on the performance of a normally on, electroabsorptive, surface-normal Fabry-Perot reflection modulator. The device employs a cavity with a 100 angstrom GaAs/100 angstrom Al0.3Ga0.7As multiple quantum well and top and bottom quarter-wave mirrors with 4 and 19.5 periods, respectively. Very low values of off-state reflectance were measured, giving a maximum contrast ratio > 1000 (30 dB) and a maximum reflectance difference of 64.3%. The contrast ratio is, to our knowledge, the largest reported to date.
引用
收藏
页码：55 / 58
页数：4
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