HIGH TOLERANCES FOR A LOW-VOLTAGE, HIGH-CONTRAST, LOW-INSERTION-LOSS ASYMMETRIC FABRY-PEROT MODULATOR

被引：12
|
作者：
ZOUGANELI, P [1 ]
WHITEHEAD, M [1 ]
STEVENS, PJ [1 ]
RIVERS, AW [1 ]
PARRY, G [1 ]
ROBERTS, JS [1 ]
机构：
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S13 SJD,ENGLAND
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 08期
关键词：
D O I：
10.1109/68.84468
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the reduction of the operating voltage of a GaAs/AlGaAs multiple-quantum-well asymmetric Fabry-Perot modulator to approximately 4.2 V for a high-contrast (approximately 15 dB), low-insertion-loss (approximately 3 dB) device. This improvement on modulator performance makes the device suitable for a practical system and has been accomplished by an increase of the front reflectivity to approximately 43%. We discuss general design issues and show that the higher finesse cavity does not have to lead to low fabrication and environmental tolerances.
引用
收藏
页码：733 / 735
页数：3
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