HIGH TOLERANCES FOR A LOW-VOLTAGE, HIGH-CONTRAST, LOW-INSERTION-LOSS ASYMMETRIC FABRY-PEROT MODULATOR

被引：12

作者：

ZOUGANELI, P ^{[1
]}

WHITEHEAD, M ^{[1
]}

STEVENS, PJ ^{[1
]}

RIVERS, AW ^{[1
]}

PARRY, G ^{[1
]}

ROBERTS, JS ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S13 SJD,ENGLAND

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 08期

关键词：

D O I：

10.1109/68.84468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the reduction of the operating voltage of a GaAs/AlGaAs multiple-quantum-well asymmetric Fabry-Perot modulator to approximately 4.2 V for a high-contrast (approximately 15 dB), low-insertion-loss (approximately 3 dB) device. This improvement on modulator performance makes the device suitable for a practical system and has been accomplished by an increase of the front reflectivity to approximately 43%. We discuss general design issues and show that the higher finesse cavity does not have to lead to low fabrication and environmental tolerances.

引用

页码：733 / 735

页数：3

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