INVERSION-LAYERS IN SILICON ON INSULATING SUBSTRATES

被引：11

作者：

ENGLERT, T

LANDWEHR, G

PONTCHARRA, J

DORDA, G

机构：

[1] CEN GRENOBLE,ELECTR LAB,GRENOBLE,FRANCE

[2] CEN GRENOBLE,TECHNOL INFORMAT LAB,GRENOBLE,FRANCE

[3] SIEMENS AG,FORSCH LAB,MUNCHEN,FED REP GER

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90524-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：427 / 436

页数：10

共 50 条

[21] THE COMPLEX CAPACITANCE OF SILICON INVERSION-LAYERS IN STRONG INVERSION AS A FUNCTION OF FREQUENCY AND RESISTANCE
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[29] REENTRANT INSULATING PHASE IN SI INVERSION-LAYERS IN LOW MAGNETIC-FIELDS
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[30] THERMAL NOISE IN INVERSION-LAYERS
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