CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：8
|
作者：
DUAN, XF
FUNG, KK
CHU, YM
SHENG, C
ZHOU, GL
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1080/09500839108201963
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
引用
收藏
页码：79 / 85
页数：7
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