CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：8
|
作者：
DUAN, XF
FUNG, KK
CHU, YM
SHENG, C
ZHOU, GL
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1080/09500839108201963
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
引用
收藏
页码：79 / 85
页数：7
相关论文
共 50 条
  • [31] Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy
    Soshnikov, I. P.
    Cirlin, G. E.
    Tonkikh, A. A.
    Nevedomskii, V. N.
    Samsonenko, Yu. B.
    Ustinov, V. M.
    PHYSICS OF THE SOLID STATE, 2007, 49 (08) : 1440 - 1445
  • [32] GROWTH OF ZNSE-ZNS STRAINED-LAYER SUPERLATTICES BY METALLORGANIC MOLECULAR-BEAM EPITAXY
    TAIKE, A
    TERAGUCHI, N
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L989 - L991
  • [33] (INAS)(1)/(GAAS)(4) SHORT-PERIOD STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    LEWIS, JH
    SPENCER, MG
    GRIFFIN, JA
    ZHANG, DP
    GRUNTHANER, F
    GEORGE, T
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 167 - 172
  • [34] ELECTRICAL CHARACTERIZATION OF SI-DOPED GAAS0.5SB0.5 ON INP GROWN BY MOLECULAR-BEAM EPITAXY
    SANDHU, A
    FUJII, T
    NAKATA, Y
    SUGIYAMA, S
    MIYAUCHI, E
    ELECTRONICS LETTERS, 1988, 24 (08) : 451 - 452
  • [35] Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy
    Sadofyev, Yu G.
    Martovitsky, V. P.
    Bazalevsky, M. A.
    Klekovkin, A. V.
    Averyanov, D. V.
    Vasil'evskii, I. S.
    SEMICONDUCTORS, 2015, 49 (01) : 124 - 129
  • [36] Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy
    Yu. G. Sadofyev
    V. P. Martovitsky
    M. A. Bazalevsky
    A. V. Klekovkin
    D. V. Averyanov
    I. S. Vasil’evskii
    Semiconductors, 2015, 49 : 124 - 129
  • [37] STUDY OF COSI2/SI STRAINED LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    KAO, YC
    WANG, KL
    DEFRESART, E
    HULL, R
    BAI, G
    JAMIESON, D
    NICOLET, MA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 745 - 748
  • [38] Effects of InGaAs/GaAs strained-layer superlattices in optimized molecular-beam-epitaxy GaAs on Si with Si buffer layers
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [39] EFFECTS OF INGAAS/GAAS STRAINED-LAYER SUPERLATTICES IN OPTIMIZED MOLECULAR-BEAM-EPITAXY GAAS AN SI WITH SI BUFFER LAYERS
    GEORGAKILAS, A
    CHRISTOU, A
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7332 - 7338
  • [40] INVESTIGATION OF MOLECULAR-BEAM EPITAXIALLY GROWN INAS/(IN,GA)SB STRAINED-LAYER SUPERLATTICES
    GOLDING, TD
    SHIH, HD
    ZBOROWSKI, JT
    FAN, WC
    HORTON, CC
    CHOW, PC
    VIGLIANTE, A
    COVINGTON, BC
    CHI, A
    ANTHONY, JM
    SCHAAKE, HF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 880 - 884
12345