CONVERGENT-BEAM ELECTRON-DIFFRACTION STUDY OF GE0.5SI0.5/SI STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：8
|
作者：
DUAN, XF
FUNG, KK
CHU, YM
SHENG, C
ZHOU, GL
机构：
[1] CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA
[2] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[3] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 63卷 / 02期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1080/09500839108201963
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Side bands due to purely composition and combined composition-strain modulation in plan-view specimens of a nominally Ge0.5Si0.5(5nm)/Si(25nm) superlattice have been obtained by large-angle convergent-beam electron diffraction. The intensities of the side bands have been calculated from a periodic tension-compression model of the superlattice bilayer using the kinematical theory of electron diffraction. Accurate values of elastic strains in the bilayer and of the Ge content can be obtained in this way.
引用
收藏
页码：79 / 85
页数：7
相关论文
共 50 条
  • [1] CHARACTERIZATION OF SI/GE0.5SI0.5 STRAINED-LAYER SUPERLATTICES ON SIMOX SUBSTRATES
    LIN, CG
    HEMMENT, PLF
    CHAN, CWM
    LI, JH
    ZHU, WH
    NI, RH
    ZHOU, GL
    ZOU, SC
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 132 (02): : 419 - 423
  • [2] CONVERGENT-BEAM ELECTRON-DIFFRACTION AND X-RAY-DIFFRACTION CHARACTERIZATION OF STRAINED-LAYER SUPERLATTICES
    DUAN, XF
    FUNG, KK
    ULTRAMICROSCOPY, 1991, 36 (04) : 375 - 384
  • [3] ELLIPSOMETRIC STUDY OF SI0.5GE0.5/SI STRAINED-LAYER SUPERLATTICES
    SIEG, RM
    ALTEROVITZ, SA
    CROKE, ET
    HARRELL, MJ
    APPLIED PHYSICS LETTERS, 1993, 62 (14) : 1626 - 1628
  • [4] PROFILING OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION AND ELECTRON HOLOGRAPHY
    DUAN, XF
    GRIGORIEFF, N
    CHERNS, D
    STEEDS, JW
    SHENG, C
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1993, 1993, (134): : 513 - 516
  • [5] MICROSTRUCTURE IN MOLECULAR-BEAM-EPITAXY-GROWN SI/GE SHORT-PERIOD STRAINED-LAYER SUPERLATTICES
    MATSUHATA, H
    MIKI, K
    SAKAMOTO, K
    SAKAMOTO, T
    YOSHIDA, S
    PHYSICAL REVIEW B, 1993, 47 (16): : 10474 - 10483
  • [6] INTERMIXING PROBLEMS OF SYMMETRICAL STRAINED SI/GE MONOLAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    WOO, YD
    KANG, TW
    KIM, TW
    LEE, JY
    ARBERT, V
    WANG, KL
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 144 (01): : K31 - K35
  • [7] ELECTRON AND X-RAY-DIFFRACTION STUDY OF ZNTE-ZNS STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY
    KARASAWA, T
    OHKAWA, K
    MITSUYU, T
    APPLIED PHYSICS LETTERS, 1989, 54 (02) : 117 - 119
  • [8] VALENCE BAND-STRUCTURE OF STRAINED-LAYER SI-SI0.5GE0.5 SUPERLATTICES
    EKENBERG, U
    BATTY, W
    OREILLY, EP
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 553 - 556
  • [9] Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
    Su, Shaojian
    Zhang, Dongliang
    Zhang, Guangze
    Xue, Chunlai
    Cheng, Buwen
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 : 543 - 551
  • [10] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    FELDMAN, LC
    FIORY, AT
    NAKAHARA, S
    ROBINSON, IK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
12345