PROPERTIES OF PLASMA ENHANCED CVD SILICON-NITRIDE - MEASUREMENTS AND INTERPRETATIONS

被引：0

作者：

MAR, KM ^{[1
]}

SAMUELSON, GM ^{[1
]}

机构：

[1] MOTOROLA INC,SEMICOND GRP,SEMICOND RES & DEV LABS,PHOENIX,AZ 85036

来源：

SOLID STATE TECHNOLOGY | 1980年 / 23卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measurement techniques and the interpretations of the properties of plasma enhanced CVD silicon nitride are discussed. These properties include structure (Si-H, N-H, and Si-N), composition (Si/N), physical (uv absorption edge, index of refraction, mechanical stress, and density), and electrical (dielectric, dc conductivity, and CV). I. R. and elemental composition measurements reveal that SiN's are highly nonstoichiometric with 1. 93 multiplied by 10**2**2/cm**3 bonded H.

引用

页码：137 / 142

页数：6

共 50 条

[1] A STUDY OF REMOTE PLASMA-ENHANCED CVD OF SILICON-NITRIDE FILMS
ALEXANDROV, SE
HITCHMAN, ML
SHAMLIAN, S
JOURNAL DE PHYSIQUE IV, 1993, 3 (C3): : 233 - 240
[2] MECHANICAL-PROPERTIES OF PLASMA-CVD SILICON-NITRIDE FILM
MUKAI, K
HIRAIWA, A
MURAMATSU, S
TAKAHASHI, S
HARADA, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C118 - C118
[3] SILICON-NITRIDE DEPOSITION BY PLASMA ENHANCED LOW-PRESSURE CVD TECHNIQUE
SEQUEDA, F
RICHARDSON, RE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 362 - 363
[4] MICROSTRUCTURE AND PROPERTIES OF CVD SILICON-NITRIDE FILMS
POPOVA, LI
VITANOV, PK
ANTOV, BZ
PASHOV, NK
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 31 (03) : 429 - 434
[5] SINTERING AND MICROSTRUCTURE OF SILICON-NITRIDE PREPARED BY PLASMA CVD
MORIYOSHI, Y
FUTAKI, M
EKINAGA, N
NAKATA, T
JOURNAL OF MATERIALS SCIENCE, 1992, 27 (16) : 4477 - 4482
[6] THE ROLE OF COMPOSITION IN THE PROPERTIES OF PLASMA CVD SILICON-NITRIDE AND OXYNITRIDE PASSIVATION FILMS
SACHDEV, S
BAERG, B
GARGINI, PA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C95 - C96
[7] C-V STUDIES OF PLASMA-ENHANCED CVD SILICON-NITRIDE FILM
MAR, KM
MATTOX, RJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C353 - C353
[8] OBSERVATION OF AN ANOMALOUSLY HIGH ETCH RATE IN PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS
LING, CH
KWOK, CY
PRASAD, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (01): : K1 - K4
[9] PLASMA-ENHANCED CVD SILICON-NITRIDE ANTI-REFLECTION COATING FOR SILICON SOLAR-CELLS
WYDEVEN, T
JOHNSON, CC
DONOHOE, K
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1982, 184 (SEP): : 16 - ORPL
[10] OXIDATION BEHAVIOR OF CVD SILICON-NITRIDE
CHOI, DJ
SCOTT, WD
FISCHBACH, DB
AMERICAN CERAMIC SOCIETY BULLETIN, 1982, 61 (09): : 950 - 950

← 1 2 3 4 5 →