PROPERTIES OF PLASMA ENHANCED CVD SILICON-NITRIDE - MEASUREMENTS AND INTERPRETATIONS

被引：0
|
作者：
MAR, KM [1 ]
SAMUELSON, GM [1 ]
机构：
[1] MOTOROLA INC,SEMICOND GRP,SEMICOND RES & DEV LABS,PHOENIX,AZ 85036
来源：
SOLID STATE TECHNOLOGY | 1980年 / 23卷 / 04期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The measurement techniques and the interpretations of the properties of plasma enhanced CVD silicon nitride are discussed. These properties include structure (Si-H, N-H, and Si-N), composition (Si/N), physical (uv absorption edge, index of refraction, mechanical stress, and density), and electrical (dielectric, dc conductivity, and CV). I. R. and elemental composition measurements reveal that SiN's are highly nonstoichiometric with 1. 93 multiplied by 10**2**2/cm**3 bonded H.
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页码：137 / 142
页数：6
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