OXIDATION BEHAVIOR OF CVD SILICON-NITRIDE

被引：0

作者：

CHOI, DJ ^{[1
]}

SCOTT, WD ^{[1
]}

FISCHBACH, DB ^{[1
]}

机构：

[1] UNIV WASHINGTON,SEATTLE,WA 98195

来源：

AMERICAN CERAMIC SOCIETY BULLETIN | 1982年 / 61卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：950 / 950

页数：1

共 50 条

[1] OXIDATION STUDIES OF CRYSTALLINE CVD SILICON-NITRIDE
DU, HH
TRESSLER, RE
SPEAR, KE
PANTANO, CG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (05) : 1527 - 1536
[2] OXIDATION OF SILICON-NITRIDE
MUKERJI, J
NANDI, AK
DHARGUPTA, KK
[J]. CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE BULLETIN, 1978, 25 (03): : 55 - 59
[3] MICROSTRUCTURE OF THICK CVD SILICON-NITRIDE
KIM, SI
SCOTT, WD
[J]. AMERICAN CERAMIC SOCIETY BULLETIN, 1983, 62 (08): : 869 - 869
[4] LASER ACTIVATED CVD OF SILICON DIOXIDE AND SILICON-NITRIDE
SABIN, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C100 - C101
[5] PHOTO CVD SYSTEM FOR SILICON-NITRIDE FILM
NUMASAWA, Y
YAMAZAKI, K
HAMANO, K
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) : 27 - 30
[6] MICROSTRUCTURE AND PROPERTIES OF CVD SILICON-NITRIDE FILMS
POPOVA, LI
VITANOV, PK
ANTOV, BZ
PASHOV, NK
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 31 (03) : 429 - 434
[7] LOW-PRESSURE CVD OF SILICON-NITRIDE
ROENIGK, KF
JENSEN, KF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (07) : 1777 - 1785
[8] OXIDATION BEHAVIOR OF SILICON-NITRIDE UNDER CYCLIC AND STATIC CONDITIONS
MAEDA, M
NAKAMURA, K
OHKUBO, T
ITO, M
ISHII, E
[J]. CERAMICS INTERNATIONAL, 1989, 15 (04) : 247 - 253
[9] IMPROVEMENT OF OXIDATION BEHAVIOR OF DENSE SILICON-NITRIDE BY SURFACE MODIFICATION
TAUT, C
HERRMANN, M
GROSSE, G
THIELE, P
GOGOTSI, Y
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1994, 13 (03) : 239 - 246
[10] OXIDATION BEHAVIOR OF A HOT ISOSTATICALLY PRESSED SILICON-NITRIDE MATERIAL
THEMELIN, L
DESMAISONBRUT, M
BILLY, M
[J]. JOURNAL DE PHYSIQUE IV, 1993, 3 (C9): : 881 - 888

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