ANALYSIS OF THE LATCH PHENOMENON IN THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE

被引：1
|
作者：
BALESTRA, F
机构：
[1] Laboratoire de Physique des Composants à Semiconducteurs (URA-CNRS), ENSERG, INPG, 38016 Grenoble
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90550-B
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A study of the latch and breakdown phenomena in thin film SOI MOSFET's is performed as a function of temperature. The experimental analysis is concentrated on p-channel devices, for which no investigation of the parasitic bipolar transistor has been carried out. We show that latch problems are observed for thin-film p-channel devices in the sub-half-micrometer range. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects are strongly reduced at liquid nitrogen temperature, and vanish entirely at liquid helium temperature. Similar improvements are expected for low temperature operation of n-channel devices.
引用
收藏
页码：811 / 814
页数：4
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