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- [32] DOPING DEPENDENCE OF MINORITY-CARRIER LIFETIME IN GA-DOPED SILICON CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 435 - 440
- [34] MINORITY-CARRIER LIFETIME AND BACKSCATTERING MEASUREMENTS OF ION-GETTERED SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 125 - 132
- [35] MINORITY-CARRIER LIFETIME AND DEFECT STRUCTURE IN SILICON AFTER CESIUM IMPLANTATION PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 43 (01): : 119 - 131
- [36] MINORITY-CARRIER LIFETIME IMPROVEMENT IN SILICON THROUGH LASER DAMAGE GETTERING PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 127 - 134
- [37] IRE STANDARDS ON SOLID-STATE DEVICES - MEASUREMENT OF MINORITY-CARRIER LIFETIME IN GERMANIUM AND SILICON BY METHOD OF PHOTOCONDUCTIVE DECAY PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (08): : 1292 - &