FORMATION OF HIGH CONDUCTANCE POLYSILICON WITH ANISOTROPIC ETCH CHARACTERISTICS BY HIGH-DOSE ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：0
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作者：
RAICU, B [1 ]
机构：
[1] ION CONSULTING,MT VIEW,CA 94040
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C122 / C123
页数：2
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