INTERFACE STATES IN MOS-TRANSISTORS

被引：0

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作者：

BALDINGE.E

SEQUIN, C

机构：

来源：

ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK | 1969年 / 20卷 / 04期

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D O I：

10.1007/BF01595073

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

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页码：587 / &

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