ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON

被引：27
|
作者：
MULLER, H [1 ]
KRANZ, H [1 ]
RYSSEL, H [1 ]
SCHMID, K [1 ]
机构：
[1] TECH UNIV MUNICH,LEHRSTUHL INTEGRIERTE SCHALTUNGEN,D-8 MUNICH 2,WEST GERMANY
来源：
APPLIED PHYSICS | 1974年 / 4卷 / 02期
关键词：
D O I：
10.1007/BF00884266
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：115 / 123
页数：9
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